FTD2017A no.7469-1/4 features ? low on-resistance. ? 2.5v drive. ? mounting height 1.1mm ? composite type, facilitating high-density mounting. ? drain common specifications. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 6a drain current (pulse) i dp pw 10 m s, duty cycle 1% 40 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit 1.3 w total dissipation p t mounted on a ceramic board (1000mm 2 5 0.8mm) 1.4 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =6a 9 13 s marking : d2017a continued on next page. n-channl silicon mosfet ordering number : enn7469 FTD2017A 22004 ts im ta-3937 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. load switching applications package dimensions unit : mm 2155a [FTD2017A] sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 sanyo : tssop8 6.4 3.0 0.425 0.65 4.5 0.95 (0.95) 0.5 0.125 85 14 0.25 1.0 0.1
FTD2017A no.7469-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit r ds (on)1 i d =6a, v gs =4.5v 17 23 m w static drain-to-source on-state resistance r ds (on)2 i d =6a, v gs =4v 18 24 m w r ds (on)3 i d =3a, v gs =3.1v 19 30 m w r ds (on)4 i d =3a, v gs =2.5v 20 33 m w input capacitance ciss v ds =10v, f=1mhz 1530 pf output capacitance coss v ds =10v, f=1mhz 230 pf reverse transfer capacitance crss v ds =10v, f=1mhz 215 pf turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 225 ns turn-off delay time t d (off) see specified test circuit. 125 ns fall time t f see specified test circuit. 125 ns total gate charge qg v ds =10v, v gs =4.5v, i d =6a 21 nc gate-to-source charge qgs v ds =10v, v gs =4.5v, i d =6a 3.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4.5v, i d =6a 4.8 nc diode forward voltage v sd i s =6a, v gs =0 0.83 1.2 v switching time test circuit electrical connection (top view) pw=10 m s d.c. 1% p. g 50 w g s d i d =5a r l =2 w v dd =10v v out FTD2017A v in 4.5v 0v v in 0 0.05 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0 1 2 3 6 5 4 8 7 0.4 0.3 0.35 0.15 0.2 0.25 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it05892 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 1.8 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it05893 v gs =1.5v 2.0v 2.5v 3.0v 4.5v 4.0v ta=75 c --25 c v ds =10v 25 c ds2s2g2 ds1s4g4
FTD2017A no.7469-3/4 1.0 10 100 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 24 0681014 12 16 18 20 0.01 0.1 1.0 10 3 5 7 2 5 3 2 7 3 5 7 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it05901 100 1000 7 2 3 5 7 5 3 2 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it05899 it05897 diode forward voltage, v f -- v forward drain current, i f -- a i f -- v f 0.01 23 57 1.0 10 0.1 23 57 23 57 23 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 15 20 510 4.5 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it05900 10 100 1000 0.1 1.0 23 57 57 23 2 3 5 7 2 3 5 7 drain current, i d -- a sw time -- i d switching time, sw time -- ns it05898 drain current, i d -- a it05896 0.01 0.1 1.0 10 23 57 23 7 52357 0.1 1.0 10 5 2 3 7 2 3 5 7 2 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d ta= --25 c 75 c 25 c v ds =10v ta=75 c 25 c --25 c v gs =0 coss crss ciss f=1mhz t d (on) t r t d (off) t f v dd =10v v gs =4.5v v ds =10v i d =6a i d =6a operation in this area is limited by r ds (on). 10ms 100ms 1ms 100 m s i dp =40a <10 m s 02468 20 25 30 35 40 45 50 0 5 10 15 10 12 gate-to-source voltage, v gs -- v r ds (on) -- v gs it05894 case temperature, ta -- c r ds (on) -- ta it05895 --75 --50 --25 0 25 50 75 100 125 150 175 0 10 30 25 20 5 15 50 45 40 35 ta=25 c 6a i d =3a static drain-to-source on-state resistance, r ds (on) -- m w ta=25 c single pulse mounted on a ceramic board(1000mm 2 5 0.8mm) 1unit dc operation static drain-to-source on-state resistance, r ds (on) -- m w i d =6.0a, v gs =4.0v i d =3.0a, v gs =2.5v i d =6.0a, v gs =4.5v
FTD2017A no.7469-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2004. specifications and information herein are subject to change without notice. ps 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.3 0.5 20 40 60 80 100 120 1.0 1.3 1.4 1.5 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.3 ambient temperature, ta -- c p d -- ta p d (fet1) -- p d (fet2) allowable power dissipation, p d -- w allowable power dissipation(fet2), p d -- w allowable power dissipation(fet1), p d -- w it05902 it05903 total dissipation 1 unit mounted on a ceramic board(1000mm 2 5 0.8mm) mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit
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